Publication: Research - peer-review › Conference article – Annual report year: 2012
A tunable 800 nm high-power dual-wavelength diode laser system with double-Littrow external-cavity feedback is demonstrated. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. A maximum output power of 1.54 W is achieved with a frequency difference of 0.86 THz, the output power is higher than 1.3 W in the 5.0 THz range of frequency difference, and the amplified spontaneous emission intensity is more than 20 dB suppressed in the range of frequency difference. The beam quality factor M2 is 1.22±0.15 at an output power of 1.35 W. The simultaneous oscillation of the two wavelengths is under test by the sum-frequency generation experiment in a bismuth triborate (BIBO) nonlinear crystal.
|Journal||Proceedings of SPIE, the International Society for Optical Engineering|
|State||Published - 2012|
|Event||SPIE Photonics West : High-Power Diode Laser Technology and Applications X - San Francisco, CA, United States|
|Conference||SPIE Photonics West : High-Power Diode Laser Technology and Applications X|
|City||San Francisco, CA|
|Period||22/01/2012 → 22/01/2012|
|Citations||Web of Science® Times Cited: 0|
- Tapered amplifier, External-cavity, THz, Dual-wavelength, High power tapered laser
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