Exciton dephasing and biexciton binding in CdSe/ZnSe islands

Publication: Research - peer-reviewJournal article – Annual report year: 1999

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The dephasing of excitons and the formation of biexcitons in self-organized CdSe/ZnSe islands grown by molecular-beam epitaxy is investigated using spectrally resolved four-wave mixing. A distribution of exciton-exciton scattering efficiencies and dephasing times in the range of 0.5-10 ps are observed. This indicates the presence of differently localized exciton states at comparable transition energies. Polarization-dependent measurements identify the formation of biexcitons with a biexciton binding energy of more than four times the bulk value. With decreasing exciton energy, the binding energy slightly increases from 21.5 to 23 meV, while its broadening decreases from 5.5 to 3 meV. This is attributed to a strong three-dimensional confinement with improving shape uniformity for decreasing exciton energy. [S0163-1829(99)04739-6].
Original languageEnglish
JournalPhysical Review B Condensed Matter
Publication date1999
Volume60
Issue15
Pages10640-10643
ISSN0163-1829
DOIs
StatePublished

Bibliographical note

Copyright (1999) by the American Physical Society.

CitationsWeb of Science® Times Cited: 23

Keywords

  • LASERS, ZNSE, WELLS, ENERGY, OPTICAL INVESTIGATIONS, STRAIN, EPITAXY, GROWTH, QUANTUM-DOT STRUCTURES, FILMS
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