Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

Publication: Research - peer-reviewPoster – Annual report year: 2010

Standard

Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition. / Chen, Yunzhong; Pryds, Nini; Schou, Jørgen; Linderoth, Søren.

2010. Poster session presented at 7th International Conference on Photo-Excited Processes and Applications, Copenhagen, Denmark.

Publication: Research - peer-reviewPoster – Annual report year: 2010

Harvard

Chen, Y, Pryds, N, Schou, J & Linderoth, S 2010, 'Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition' 7th International Conference on Photo-Excited Processes and Applications, Copenhagen, Denmark, 15/08/10 - 19/08/10,

APA

Chen, Y., Pryds, N., Schou, J., & Linderoth, S. (2010). Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition. Poster session presented at 7th International Conference on Photo-Excited Processes and Applications, Copenhagen, Denmark.

CBE

Chen Y, Pryds N, Schou J, Linderoth S. 2010. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition. Poster session presented at 7th International Conference on Photo-Excited Processes and Applications, Copenhagen, Denmark.

MLA

Vancouver

Chen Y, Pryds N, Schou J, Linderoth S. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition. 2010. Poster session presented at 7th International Conference on Photo-Excited Processes and Applications, Copenhagen, Denmark.

Author

Chen, Yunzhong; Pryds, Nini; Schou, Jørgen; Linderoth, Søren / Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition.

2010. Poster session presented at 7th International Conference on Photo-Excited Processes and Applications, Copenhagen, Denmark.

Publication: Research - peer-reviewPoster – Annual report year: 2010

Bibtex

@misc{7195b382cc6240bc97b6e568c2f9b962,
title = "Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition",
keywords = "Solid Oxide Fuel Cells, Fuel Cells and Hydrogen, Brændselsceller og brint",
author = "Yunzhong Chen and Nini Pryds and Jørgen Schou and Søren Linderoth",
year = "2010",
type = "ConferencePaper <importModel: ConferenceImportModel>",

}

RIS

TY - CONF

T1 - Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

A1 - Chen,Yunzhong

A1 - Pryds,Nini

A1 - Schou,Jørgen

A1 - Linderoth,Søren

AU - Chen,Yunzhong

AU - Pryds,Nini

AU - Schou,Jørgen

AU - Linderoth,Søren

PY - 2010

Y1 - 2010

N2 - Ceria-based thin films are often applied as key functional components in miniaturized electroceramic devices such as solid oxide fuel cells or gas sensors. Processing routes that prevent thermal degradation and yield access to the optimum microstructures are sought. Multi-step growth, involving the preparation of ultrathin seed layers in the first stage of the deposition process is often envisaged to control the growth and physical properties of the subsequent coating. This work suggests that the limitations of conventional pulsed laser deposition (PLD), performed at moderate temperature (400°C), to the growth of dense, gas impermeable 10 mol% gadolinia-doped ceria (CGO10) solid electrolyte can be overcome by the seeding process. In order to evaluate the seed layer preparation, the effects of different thermal annealing treatments on the morphology, microstructure and surface roughness of ultrathin CGO10 layers with a thickness of 4 nm, 13 nm and 22 nm, respectively, grown on Mg(100), were studied by atomic force microscopy and X-ray reflectometry.

AB - Ceria-based thin films are often applied as key functional components in miniaturized electroceramic devices such as solid oxide fuel cells or gas sensors. Processing routes that prevent thermal degradation and yield access to the optimum microstructures are sought. Multi-step growth, involving the preparation of ultrathin seed layers in the first stage of the deposition process is often envisaged to control the growth and physical properties of the subsequent coating. This work suggests that the limitations of conventional pulsed laser deposition (PLD), performed at moderate temperature (400°C), to the growth of dense, gas impermeable 10 mol% gadolinia-doped ceria (CGO10) solid electrolyte can be overcome by the seeding process. In order to evaluate the seed layer preparation, the effects of different thermal annealing treatments on the morphology, microstructure and surface roughness of ultrathin CGO10 layers with a thickness of 4 nm, 13 nm and 22 nm, respectively, grown on Mg(100), were studied by atomic force microscopy and X-ray reflectometry.

KW - Solid Oxide Fuel Cells

KW - Fuel Cells and Hydrogen

KW - Brændselsceller og brint

UR - http://www.icpepa7.com/upload/institutter/com/micro/bookabstracts_280910_2.pdf

ER -