Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

Publication: Research - peer-reviewPoster – Annual report year: 2010

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Ceria-based thin films are often applied as key functional components in miniaturized electroceramic devices such as solid oxide fuel cells or gas sensors. Processing routes that prevent thermal degradation and yield access to the optimum microstructures are sought. Multi-step growth, involving the preparation of ultrathin seed layers in the first stage of the deposition process is often envisaged to control the growth and physical properties of the subsequent coating. This work suggests that the limitations of conventional pulsed laser deposition (PLD), performed at moderate temperature (400°C), to the growth of dense, gas impermeable 10 mol% gadolinia-doped ceria (CGO10) solid electrolyte can be overcome by the seeding process. In order to evaluate the seed layer preparation, the effects of different thermal annealing treatments on the morphology, microstructure and surface roughness of ultrathin CGO10 layers with a thickness of 4 nm, 13 nm and 22 nm, respectively, grown on Mg(100), were studied by atomic force microscopy and X-ray reflectometry.
Original languageEnglish
Publication date2010
StatePublished - 2010
Event7th International Conference on Photo-Excited Processes and Applications - Copenhagen, Denmark


Conference7th International Conference on Photo-Excited Processes and Applications
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  • Solid Oxide Fuel Cells, Fuel Cells and Hydrogen
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ID: 5039067