Engineering piezoresistivity using biaxially strained silicon

Publication: Research - peer-reviewJournal article – Annual report year: 2008

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We calculate the shear piezocoefficient of p-type silicon with grown-in biaxial strain using a 66 k·p method. We find a significant increase in the value of the shear piezocoefficient for compressive grown-in biaxial strain, while tensile strain decreases the piezocoefficient. The dependence of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity to enhance the performance of ezoresistive stress sensors.
Original languageEnglish
JournalApplied Physics Letters
Publication date2008
Volume93
Journal number26
Pages263501
ISSN0003-6951
DOIs
StatePublished

Bibliographical note

Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

CitationsWeb of Science® Times Cited: 0

Keywords

  • piezoresistive devices, elemental semiconductors, p calculations, tensile strength, compressive strength, piezoresistance, silicon, k
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