EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling

Research output: Research - peer-reviewJournal article – Annual report year: 2018

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In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.
Original languageEnglish
JournalInternational Journal of Microwave and Wireless Technologies
Pages (from-to)1-9
Number of pages9
ISSN1759-0787
DOIs
StatePublished - 2018
CitationsWeb of Science® Times Cited: No match on DOI
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