Electrochemical Characterization of La0.58Sr0.4Co0.2Fe0.8O3-δ Thin Film Electrodes Prepared by Pulsed Laser Deposition

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Electrochemical Characterization of La0.58Sr0.4Co0.2Fe0.8O3-δ Thin Film Electrodes Prepared by Pulsed Laser Deposition. / Plonczak, Pawel; Søgaard, Martin; Bieberle-Hütter, Anja; Hendriksen, Peter Vang; Gauckler, Ludwig J.

In: Electrochemical Society. Journal, Vol. 159, No. 5, 2012, p. 471-482.

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Plonczak, Pawel; Søgaard, Martin; Bieberle-Hütter, Anja; Hendriksen, Peter Vang; Gauckler, Ludwig J. / Electrochemical Characterization of La0.58Sr0.4Co0.2Fe0.8O3-δ Thin Film Electrodes Prepared by Pulsed Laser Deposition.

In: Electrochemical Society. Journal, Vol. 159, No. 5, 2012, p. 471-482.

Publication: Research - peer-reviewJournal article – Annual report year: 2012

Bibtex

@article{c1f41d2394ef4eb9a84c70aa6b038e1e,
title = "Electrochemical Characterization of La<sub>0.58</sub>Sr<sub>0.4</sub>Co<sub>0.2</sub>Fe<sub>0.8</sub>O<sub>3-δ</sub> Thin Film Electrodes Prepared by Pulsed Laser Deposition",
publisher = "Electrochemical Society, Inc.",
author = "Pawel Plonczak and Martin Søgaard and Anja Bieberle-Hütter and Hendriksen, {Peter Vang} and Gauckler, {Ludwig J.}",
year = "2012",
doi = "10.1149/2.043204jes",
volume = "159",
number = "5",
pages = "471--482",
journal = "Electrochemical Society. Journal",
issn = "0013-4651",

}

RIS

TY - JOUR

T1 - Electrochemical Characterization of La<sub>0.58</sub>Sr<sub>0.4</sub>Co<sub>0.2</sub>Fe<sub>0.8</sub>O<sub>3-δ</sub> Thin Film Electrodes Prepared by Pulsed Laser Deposition

A1 - Plonczak,Pawel

A1 - Søgaard,Martin

A1 - Bieberle-Hütter,Anja

A1 - Hendriksen,Peter Vang

A1 - Gauckler,Ludwig J.

AU - Plonczak,Pawel

AU - Søgaard,Martin

AU - Bieberle-Hütter,Anja

AU - Hendriksen,Peter Vang

AU - Gauckler,Ludwig J.

PB - Electrochemical Society, Inc.

PY - 2012

Y1 - 2012

N2 - Electrochemical properties of La0.58Sr0.4Co0.2Fe0.8O3-δ (LSCF) thin films with well defined microstructures have been investigated. Symmetrical cells were characterized by impedance spectroscopy in the temperature range from 625 to 750°C and the oxygen partial pressure, range from 10-2 to 1 atm. The area specific resistance for dense films was invariant with thicknesses between 130 and 1200 nm indicating oxygen surface exchange as the process limiting oxygen transport in the films. The capacitances deduced from the impedance data show a linear dependence with the film thickness. Values were as high as 0.2 F cm-2 suggesting a chemical capacitance. The oxygen non-stoichiometry was calculated using the measured chemical capacitance and a defect chemistry model. While dense films have an area specific resistance of 8 Ω cm2 at 750°C, porous films with an increase of the surface area by 26 times have only an area specific resistance of 0.38 Ω cm2. It is shown that the polarization resistance of thin films is approximately proportional to the inverse of the surface area of the porous cathodes in the temperature regime 625 to 750°C. The activation energy of the surface oxygen exchange process depends on the thin film microstructure as it decreased from 2.4 eV for dense films to 1.6 eV for porous films.

AB - Electrochemical properties of La0.58Sr0.4Co0.2Fe0.8O3-δ (LSCF) thin films with well defined microstructures have been investigated. Symmetrical cells were characterized by impedance spectroscopy in the temperature range from 625 to 750°C and the oxygen partial pressure, range from 10-2 to 1 atm. The area specific resistance for dense films was invariant with thicknesses between 130 and 1200 nm indicating oxygen surface exchange as the process limiting oxygen transport in the films. The capacitances deduced from the impedance data show a linear dependence with the film thickness. Values were as high as 0.2 F cm-2 suggesting a chemical capacitance. The oxygen non-stoichiometry was calculated using the measured chemical capacitance and a defect chemistry model. While dense films have an area specific resistance of 8 Ω cm2 at 750°C, porous films with an increase of the surface area by 26 times have only an area specific resistance of 0.38 Ω cm2. It is shown that the polarization resistance of thin films is approximately proportional to the inverse of the surface area of the porous cathodes in the temperature regime 625 to 750°C. The activation energy of the surface oxygen exchange process depends on the thin film microstructure as it decreased from 2.4 eV for dense films to 1.6 eV for porous films.

U2 - 10.1149/2.043204jes

DO - 10.1149/2.043204jes

JO - Electrochemical Society. Journal

JF - Electrochemical Society. Journal

SN - 0013-4651

IS - 5

VL - 159

SP - 471

EP - 482

ER -