Electrical characterization of InGaAs ultra-shallow junctions

Publication: Research - peer-reviewJournal article – Annual report year: 2010

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In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) and micro Hall effect methods. Due to the high carrier mobility of InGaAs, we extend the micro-Hall effect position error suppression method to also take geometrical magnetoresistance into account. We find that the conventional techniques fail to measure accurately on n(++)/p(+) USJ due to a significant leakage current, whereas the M4PP and micro Hall effect methods are able to give accurate results. Finally, we observe a significant reduction in the carrier mobility for InGaAs USJ.
Original languageEnglish
JournalJournal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
Issue number1
Pages (from-to)C1C41-C1C47
StatePublished - 2010
CitationsWeb of Science® Times Cited: No match on DOI


  • III-V semiconductors, gallium arsenide, leakage currents, semiconductor thin films, Hall effect, indium compounds, magnetoresistance, carrier mobility
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