Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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@article{1d23641d2c2c4cf381cf673c40a0cae1,
title = "Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference",
publisher = "Optical Society of America",
author = "Mingjun Chi and Jensen, {Ole Bjarlin} and Petersen, {Paul Michael}",
note = "This paper was published in JOSA B and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/josab/abstract.cfm?uri=josab-29-9-2617. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.",
year = "2012",
doi = "10.1364/JOSAB.29.002617",
volume = "29",
number = "9",
pages = "2617--2621",
journal = "Optical Society of America. Journal B: Optical Physics",
issn = "0740-3224",

}

RIS

TY - JOUR

T1 - Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

A1 - Chi,Mingjun

A1 - Jensen,Ole Bjarlin

A1 - Petersen,Paul Michael

AU - Chi,Mingjun

AU - Jensen,Ole Bjarlin

AU - Petersen,Paul Michael

PB - Optical Society of America

PY - 2012

Y1 - 2012

N2 - A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths are almost of opposite phase. The simultaneous emission of the two wavelengths is verified by a sum-frequency generation experiment in a bismuth triborate nonlinear crystal.

AB - A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths are almost of opposite phase. The simultaneous emission of the two wavelengths is verified by a sum-frequency generation experiment in a bismuth triborate nonlinear crystal.

U2 - 10.1364/JOSAB.29.002617

DO - 10.1364/JOSAB.29.002617

JO - Optical Society of America. Journal B: Optical Physics

JF - Optical Society of America. Journal B: Optical Physics

SN - 0740-3224

IS - 9

VL - 29

SP - 2617

EP - 2621

ER -