Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC
Publication: Research - peer-review › Journal article – Annual report year: 2011
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Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC. / Ou, Yiyu; Jokubavicius, Valdas; Kamiyama, Satoshi; Liu, Chuan; Berg, Rolf W.; Linnarsson, Margareta; Yakimova, Rositza; Syväjärvi, Mikael; Ou, Haiyan.
In: Optical Materials Express, Vol. 1, No. 8, 2011, p. 1439-1446.Publication: Research - peer-review › Journal article – Annual report year: 2011
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TY - JOUR
T1 - Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC
A1 - Ou,Yiyu
A1 - Jokubavicius,Valdas
A1 - Kamiyama,Satoshi
A1 - Liu,Chuan
A1 - Berg,Rolf W.
A1 - Linnarsson,Margareta
A1 - Yakimova,Rositza
A1 - Syväjärvi,Mikael
A1 - Ou,Haiyan
AU - Ou,Yiyu
AU - Jokubavicius,Valdas
AU - Kamiyama,Satoshi
AU - Liu,Chuan
AU - Berg,Rolf W.
AU - Linnarsson,Margareta
AU - Yakimova,Rositza
AU - Syväjärvi,Mikael
AU - Ou,Haiyan
PB - Optical Society of America
PY - 2011
Y1 - 2011
N2 - In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018 cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018 cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.
AB - In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018 cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018 cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.
JO - Optical Materials Express
JF - Optical Materials Express
SN - 2159-3930
IS - 8
VL - 1
SP - 1439
EP - 1446
ER -