Development of design of 808 nm Al-free laser heterostructures with asymmetric barrier layers

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2018

DOI

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We study the possibility of realization of the asymmetric barrier layers (ABL) concept in an 808-nm Al-free GaInAsP/InGaP/GaAs semiconductor laser. Two ABLs on both sides of the active region are aimed to suppress the parasitic recombination in the optical confinement layers. It is shown that such ABL-laser can be made fully Al-free having high suppression ratios for parasitic charge carrier flows (60 and 207 times for electrons and holes, respectively, as compared to a conventional SCH heterostructure).
Original languageEnglish
Title of host publicationProceedings of 2018 International Conference Laser Optics
Number of pages1
PublisherIEEE
Publication date2018
Pages607-607
ISBN (print)9781538636121
DOIs
StatePublished - 2018
Event18th International Conference on Laser Optics - Saint Petersburg, Russian Federation

Conference

Conference18th International Conference on Laser Optics
LocationHoliday Inn St. Petersburg
CountryRussian Federation
CitySaint Petersburg
Period04/06/201808/06/2018
CitationsWeb of Science® Times Cited: No match on DOI

    Keywords

  • Semiconductor lasers, Quantum well, Al-free heterostructure, Asymmetric barrier layers, Parasitic recombination
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