Dephasing in InAs/GaAs quantum dots

Publication: Research - peer-reviewJournal article – Annual report year: 1999

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The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning and of 260+/-20 fs from four-wave mixing.
Original languageEnglish
JournalPhysical Review B Condensed Matter
Publication date1999
Volume60
Issue11
Pages7784-7787
ISSN0163-1829
DOIs
StatePublished

Bibliographical note

Copyright (1999) by the American Physical Society.

CitationsWeb of Science® Times Cited: 110

Keywords

  • TIME, GAAS, LASERS, SPECTROSCOPY, SEMICONDUCTOR, OPTICAL AMPLIFIERS, PROBE, DYNAMICS, EXCITONS, SUBPICOSECOND GAIN
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