Publication: Research - peer-review › Journal article – Annual report year: 1999
The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning and of 260+/-20 fs from four-wave mixing.
|Journal||Physical Review B Condensed Matter|
Copyright (1999) by the American Physical Society.
|Citations||Web of Science® Times Cited: 108|
- TIME, GAAS, LASERS, SPECTROSCOPY, SEMICONDUCTOR, OPTICAL AMPLIFIERS, PROBE, DYNAMICS, EXCITONS, SUBPICOSECOND GAIN
No data available