TY - JOUR

T1 - Degradation of the interfacial conductivity in LaAlO₃/SrTiO₃ heterostructures during storage at controlled environments

A1 - Trier,Felix

A1 - Christensen,Dennis

A1 - Chen,Yunzhong

A1 - Smith,Anders

A1 - Andersen,Martin Iglsø

A1 - Pryds,Nini

AU - Trier,Felix

AU - Christensen,Dennis

AU - Chen,Yunzhong

AU - Smith,Anders

AU - Andersen,Martin Iglsø

AU - Pryds,Nini

PB - Elsevier BV North-Holland

PY - 2013

Y1 - 2013

N2 - The remarkable discovery of a two-dimensional electron gas confined at the interface of the two oxide band-insulators SrTiO3 (STO) and LaAlO3 (LAO) has spurred a great interest in the heterostructure leading to the discovery of a plethora of other exciting properties. Recently, the formation of the interfacial electron gas has also been shown possible when LAO is deposited on STO at room temperature, which leads to the growth of amorphous LAO (a-LAO). Here, we study the development of the interfacial conductivity of LAO/STO heterostructures with crystalline and amorphous LAO top layers in different controlled environments over time. The interfacial conductivity is found to degrade with a strong dependence on the thickness, the crystallinity of the deposited layer and the storage environment. A mechanism for the degradation is proposed and is further utilized to significantly reduce the rate of degradation.<br/>© 2012 Elsevier B.V. All rights reserved.

AB - The remarkable discovery of a two-dimensional electron gas confined at the interface of the two oxide band-insulators SrTiO3 (STO) and LaAlO3 (LAO) has spurred a great interest in the heterostructure leading to the discovery of a plethora of other exciting properties. Recently, the formation of the interfacial electron gas has also been shown possible when LAO is deposited on STO at room temperature, which leads to the growth of amorphous LAO (a-LAO). Here, we study the development of the interfacial conductivity of LAO/STO heterostructures with crystalline and amorphous LAO top layers in different controlled environments over time. The interfacial conductivity is found to degrade with a strong dependence on the thickness, the crystallinity of the deposited layer and the storage environment. A mechanism for the degradation is proposed and is further utilized to significantly reduce the rate of degradation.<br/>© 2012 Elsevier B.V. All rights reserved.

KW - Complex oxides

KW - Heterointerfaces

KW - Two-dimensional electron gas

KW - Conductivity stability

KW - Oxygen vacancies

KW - LaAlO3/SrTiO3

U2 - 10.1016/j.ssi.2012.08.005

DO - 10.1016/j.ssi.2012.08.005

JO - Solid State Ionics

JF - Solid State Ionics

SN - 0167-2738

VL - 230

SP - 12

EP - 15

ER -