In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to account for the distributed nature of the interconnect lines. Good agreement is achieved between the small-signal model of the HBT and the measurements. Parameters for the large-signal VBIC model are extracted based on multi-bias small-signal model extraction, leading to consistency between measured and modeled fBTB.