Current Spreading Layer with High Transparency and Conductivity for near-ultraviolet light emitting diodes

Publication: Research - peer-reviewPaper – Annual report year: 2017

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Transparent conductive aluminum-doped zinc oxide (AZO) layer was deposited on GaN-based near-ultraviolet (NUV) light emitting epitaxial wafers as current spreading layer by a sputtering process. Efforts were made to improve the electrical properties of AZO in order to produce ohmic contact.
Original languageEnglish
Publication date2017
Number of pages1
StatePublished - 2017
Event5th International workshop on LEDs and solar application - Kgs. Lyngby, Denmark

Conference

Conference5th International workshop on LEDs and solar application
LocationTechnical University of Denmark
CountryDenmark
CityKgs. Lyngby
Period13/09/201714/09/2017

    Keywords

  • Near ultraviolet light emitting diodes, Transparent conductive current spreading layer, Aluminum-doped zinc oxide
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