Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide. / Sun, Jie ; Lindvall, Niclas; Cole, Matthew T.; Wang, Teng; Booth, Tim ; Bøggild, Peter; Teo, Kenneth B. K.; Liu, Johan; Yurgens, August.

In: Journal of Applied Physics, Vol. 111, No. 4, 2012.

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Author

Sun, Jie ; Lindvall, Niclas; Cole, Matthew T.; Wang, Teng; Booth, Tim ; Bøggild, Peter; Teo, Kenneth B. K.; Liu, Johan; Yurgens, August / Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide.

In: Journal of Applied Physics, Vol. 111, No. 4, 2012.

Publication: Research - peer-reviewJournal article – Annual report year: 2012

Bibtex

@article{a6cb80c925054291be0f2ddc29244268,
title = "Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide",
keywords = "Physics, Amorphous-Carbon Films, Catalytic Graphitization, Raman-Spectroscopy, Weak-Localization, Magnetoresistance, Nanotubes",
publisher = "American Institute of Physics",
author = "Jie Sun and Niclas Lindvall and Cole, {Matthew T.} and Teng Wang and Tim Booth and Peter Bøggild and Teo, {Kenneth B. K.} and Johan Liu and August Yurgens",
year = "2012",
doi = "10.1063/1.3686135",
volume = "111",
number = "4",
journal = "Journal of Applied Physics",
issn = "0021-8979",

}

RIS

TY - JOUR

T1 - Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

A1 - Sun,Jie

A1 - Lindvall,Niclas

A1 - Cole,Matthew T.

A1 - Wang,Teng

A1 - Booth,Tim

A1 - Bøggild,Peter

A1 - Teo,Kenneth B. K.

A1 - Liu,Johan

A1 - Yurgens,August

AU - Sun,Jie

AU - Lindvall,Niclas

AU - Cole,Matthew T.

AU - Wang,Teng

AU - Booth,Tim

AU - Bøggild,Peter

AU - Teo,Kenneth B. K.

AU - Liu,Johan

AU - Yurgens,August

PB - American Institute of Physics

PY - 2012

Y1 - 2012

N2 - Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp(2) hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13% of electric-field effect. The Hall mobility is similar to 40 cm(2)/ Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size similar to 10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes. (C) 2012 American Institute of Physics. [doi:10.1063/1.3686135]

AB - Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp(2) hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13% of electric-field effect. The Hall mobility is similar to 40 cm(2)/ Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size similar to 10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes. (C) 2012 American Institute of Physics. [doi:10.1063/1.3686135]

KW - Physics

KW - Amorphous-Carbon Films

KW - Catalytic Graphitization

KW - Raman-Spectroscopy

KW - Weak-Localization

KW - Magnetoresistance

KW - Nanotubes

U2 - 10.1063/1.3686135

DO - 10.1063/1.3686135

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

VL - 111

ER -