## Conduction channels at finite bias in single-atom gold contacts

Publication: Research - peer-review › Journal article – Annual report year: 1999

### Standard

**Conduction channels at finite bias in single-atom gold contacts.** / Brandbyge, Mads; Kobayashi, Nobuhiko; Tsukada, Masaru.

Publication: Research - peer-review › Journal article – Annual report year: 1999

### Harvard

*Physical Review B Condensed Matter*, vol 60, no. 24, pp. 17064-17070. DOI: 10.1103/PhysRevB.60.17064

### APA

*Physical Review B Condensed Matter*,

*60*(24), 17064-17070. DOI: 10.1103/PhysRevB.60.17064

### CBE

### MLA

*Physical Review B Condensed Matter*. 1999, 60(24). 17064-17070. Available: 10.1103/PhysRevB.60.17064

### Vancouver

### Author

### Bibtex

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### RIS

TY - JOUR

T1 - Conduction channels at finite bias in single-atom gold contacts

AU - Brandbyge,Mads

AU - Kobayashi,Nobuhiko

AU - Tsukada,Masaru

N1 - Copyright (1999) by the American Physical Society.

PY - 1999

Y1 - 1999

N2 - We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using the nonequilibrium-Green-function formalism. We calculate the voltage drop through the contacts and find the main drop located near the negative electrode. We argue that this is due to the filled d-state resonances. The conduction is analyzed in terms of transmission eigenchannels and density of states of the eigenchannels projected onto tight-binding orbitals. We find a single almost fully transmitting channel with mainly s character for low bias while for high bias this channel becomes less transmitting and additional channels involving only d orbitals start to conduct.

AB - We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using the nonequilibrium-Green-function formalism. We calculate the voltage drop through the contacts and find the main drop located near the negative electrode. We argue that this is due to the filled d-state resonances. The conduction is analyzed in terms of transmission eigenchannels and density of states of the eigenchannels projected onto tight-binding orbitals. We find a single almost fully transmitting channel with mainly s character for low bias while for high bias this channel becomes less transmitting and additional channels involving only d orbitals start to conduct.

KW - TRANSITION

KW - WIRES

KW - SIGNATURE

KW - DEFORMATION

KW - MESOSCOPIC SYSTEMS

KW - NANOWIRES

KW - QUANTIZED CONDUCTANCE

KW - RESISTANCE

KW - SCALE METALLIC CONTACTS

KW - SIZE CONTACTS

U2 - 10.1103/PhysRevB.60.17064

DO - 10.1103/PhysRevB.60.17064

M3 - Journal article

VL - 60

SP - 17064

EP - 17070

JO - Physical Review B (Condensed Matter and Materials Physics)

T2 - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 1098-0121

IS - 24

ER -