Comparison of High Resolution Negative Electron Beam Resists

Publication: Research - peer-reviewJournal article – Annual report year: 2006

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Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.
Original languageEnglish
JournalJournal of Vacuum Science & Technology B
Publication date2006
Volume24
Issue4
Pages1776-1779
ISSN1071-1023
DOIs
StatePublished
CitationsWeb of Science® Times Cited: 18
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