TY - ABST

T1 - Circular Piezoelectric Accelerometer for High Band Width Application

A1 - Hindrichsen,Christian Carstensen

A1 - Larsen,Jack

A1 - Lou-Møller,Rasmus

A1 - Hansen,K.

A1 - Thomsen,Erik Vilain

AU - Hindrichsen,Christian Carstensen

AU - Larsen,Jack

AU - Lou-Møller,Rasmus

AU - Hansen,K.

AU - Thomsen,Erik Vilain

PB - IEEE

PY - 2009

Y1 - 2009

N2 - An uniaxial bulk-micromachined piezoelectric MEMS accelerometer intended for high bandwidth application is fabricated and characterized. A circular seismic mass (radius = 1200 ¿m) is suspended by a 20 ¿m thick annular silicon membrane (radius = 1800 ¿m). A 24 ¿m PZT screen printed thick film is used as the sensing material on top of the silicon membrane. Accelerations in the out of plane direction induce a force on the seismic mass bending the membrane and a potential difference is measured in the out of plane direction of the stressed PZT. A resonance frequency of 23.50 kHz, a charge sensitivity of 0.23 pC/g and a voltage sensitivity of 0.24 mV/g are measured.

AB - An uniaxial bulk-micromachined piezoelectric MEMS accelerometer intended for high bandwidth application is fabricated and characterized. A circular seismic mass (radius = 1200 ¿m) is suspended by a 20 ¿m thick annular silicon membrane (radius = 1800 ¿m). A 24 ¿m PZT screen printed thick film is used as the sensing material on top of the silicon membrane. Accelerations in the out of plane direction induce a force on the seismic mass bending the membrane and a potential difference is measured in the out of plane direction of the stressed PZT. A resonance frequency of 23.50 kHz, a charge sensitivity of 0.23 pC/g and a voltage sensitivity of 0.24 mV/g are measured.

U2 - 10.1109/ICSENS.2009.5398277

DO - 10.1109/ICSENS.2009.5398277

SN - 978-1-4244-4548-6

BT - IEEE Sensors 2009

T2 - IEEE Sensors 2009

ER -