Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures
Publication: Research - peer-review › Journal article – Annual report year: 2011
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Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures. / Chen, Yunzhong; Stamate, Eugen; Pryds, Nini; Sun, J. R.; Shen, B. G.; Linderoth, Søren.
In: Applied Physics Letters, Vol. 98, No. 23, 2011, p. 232105 (3 pages).Publication: Research - peer-review › Journal article – Annual report year: 2011
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TY - JOUR
T1 - Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures
A1 - Chen,Yunzhong
A1 - Stamate,Eugen
A1 - Pryds,Nini
A1 - Sun,J. R.
A1 - Shen,B. G.
A1 - Linderoth,Søren
AU - Chen,Yunzhong
AU - Stamate,Eugen
AU - Pryds,Nini
AU - Sun,J. R.
AU - Shen,B. G.
AU - Linderoth,Søren
PB - American Institute of Physics
PY - 2011
Y1 - 2011
N2 - When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V
AB - When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V
KW - Plasma processing
KW - Plasmaprocessering
U2 - 10.1063/1.3598391
DO - 10.1063/1.3598391
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 23
VL - 98
SP - 232105 (3 pages)
ER -