Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures. / Chen, Yunzhong; Stamate, Eugen; Pryds, Nini; Sun, J. R.; Shen, B. G.; Linderoth, Søren.

In: Applied Physics Letters, Vol. 98, No. 23, 2011, p. 232105 (3 pages).

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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Author

Chen, Yunzhong; Stamate, Eugen; Pryds, Nini; Sun, J. R.; Shen, B. G.; Linderoth, Søren / Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures.

In: Applied Physics Letters, Vol. 98, No. 23, 2011, p. 232105 (3 pages).

Publication: Research - peer-reviewJournal article – Annual report year: 2011

Bibtex

@article{7295884439c34067a701588b53223071,
title = "Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures",
keywords = "Plasma processing, Plasmaprocessering",
publisher = "American Institute of Physics",
author = "Yunzhong Chen and Eugen Stamate and Nini Pryds and Sun, {J. R.} and Shen, {B. G.} and Søren Linderoth",
year = "2011",
doi = "10.1063/1.3598391",
volume = "98",
number = "23",
pages = "232105 (3 pages)",
journal = "Applied Physics Letters",
issn = "0003-6951",

}

RIS

TY - JOUR

T1 - Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

A1 - Chen,Yunzhong

A1 - Stamate,Eugen

A1 - Pryds,Nini

A1 - Sun,J. R.

A1 - Shen,B. G.

A1 - Linderoth,Søren

AU - Chen,Yunzhong

AU - Stamate,Eugen

AU - Pryds,Nini

AU - Sun,J. R.

AU - Shen,B. G.

AU - Linderoth,Søren

PB - American Institute of Physics

PY - 2011

Y1 - 2011

N2 - When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V

AB - When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V

KW - Plasma processing

KW - Plasmaprocessering

U2 - 10.1063/1.3598391

DO - 10.1063/1.3598391

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

VL - 98

SP - 232105 (3 pages)

ER -