Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V
Original languageEnglish
JournalApplied Physics Letters
Volume98
Issue number23
Pages (from-to)232105 (3 pages)
ISSN0003-6951
DOIs
StatePublished - 2011
Peer-reviewedYes
CitationsWeb of Science® Times Cited: 4

Keywords

  • Plasma processing
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