Characterization of donor-acceptor-pair emission in fluorescent 6H-SiC

Publication: Research - peer-reviewConference article – Annual report year: 2012

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We investigated donor-acceptor-pair emission in N-B-doped 6H-SiC samples by using photoluminescence (PL) and angle-resolved PL. It is shown that n-type doping with concentrations larger than 10(18) cm(-3) is favorable for observing luminescence, and increasing nitrogen results in stronger luminescence. A dopant concentration difference greater than 4x10(18) cm(-3) is proposed to help achieve intense PL. Angular-dependent PL was observed that was attributed to the Fabry-Perot microcavity interference effect, and a strong luminescence intensity in a large emission angle range was also achieved. The results indicate that N-B-doped fluorescent SiC is a good wavelength converter in white LED applications.
Original languageEnglish
JournalPhysica Scripta
Publication date2012
VolumeT148
Pages014003
ISSN0031-8949
DOIs
StatePublished

Conference

Conference24th Nordic Semiconductor Meeting
Number24
CountryDenmark
CityAarhus
Period19/06/1122/06/11
CitationsWeb of Science® Times Cited: 0

Keywords

  • Physics, Luminescence , Efficiency
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