TY - JOUR

T1 - Characterization of donor–acceptor-pair emission in fluorescent 6H-SiC

A1 - Ou,Yiyu

A1 - Jokubavicius,Valdas

A1 - Linnarsson,Margareta

A1 - Yakimova,Rositza

A1 - Syväjärvi,Mikael

A1 - Ou,Haiyan

AU - Ou,Yiyu

AU - Jokubavicius,Valdas

AU - Linnarsson,Margareta

AU - Yakimova,Rositza

AU - Syväjärvi,Mikael

AU - Ou,Haiyan

PB - Institute of Physics Publishing

PY - 2012

Y1 - 2012

N2 - We investigated donor–acceptor-pair emission in N–B-doped 6H-SiC samples by using photoluminescence (PL) and angle-resolved PL. It is shown that n-type doping with concentrations larger than 1018 cm−3 is favorable for observing luminescence, and increasing nitrogen results in stronger luminescence. A dopant concentration difference greater than 4×1018 cm−3 is proposed to help achieve intense PL. Angular-dependent PL was observed that was attributed to the Fabry–Pérot microcavity interference effect, and a strong luminescence intensity in a large emission angle range was also achieved. The results indicate that N–B-doped fluorescent SiC is a good wavelength converter in white LED applications.

AB - We investigated donor–acceptor-pair emission in N–B-doped 6H-SiC samples by using photoluminescence (PL) and angle-resolved PL. It is shown that n-type doping with concentrations larger than 1018 cm−3 is favorable for observing luminescence, and increasing nitrogen results in stronger luminescence. A dopant concentration difference greater than 4×1018 cm−3 is proposed to help achieve intense PL. Angular-dependent PL was observed that was attributed to the Fabry–Pérot microcavity interference effect, and a strong luminescence intensity in a large emission angle range was also achieved. The results indicate that N–B-doped fluorescent SiC is a good wavelength converter in white LED applications.

U2 - 10.1088/0031-8949/2012/T148/014003

DO - 10.1088/0031-8949/2012/T148/014003

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T148

VL - 2012

SP - 014003

ER -