Black silicon laser-doped selective emitter solar cell with 18.1% efficiency

Publication: Research - peer-reviewJournal article – Annual report year: 2015

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We report fabrication of nanostructured, laser-doped selective emitter (LDSE) silicon solar cells with power conversion efficiency of 18.1% and a fill factor (FF) of 80.1%. The nanostructured solar cells were realized through a single step, mask-less, scalable reactive ion etch (RIE) texturing of the surface. The selective emitter was formed by means of laser doping using a continuous wave (CW) laser and subsequent contact formation using light-induced plating of Ni and Cu. The combination of RIE-texturing and a LDSE cell design has to our knowledge not been demonstrated previously. The resulting efficiency indicates a promising potential, especially considering that the cell reported in this work is the first proof-of-concept and that the fabricated cell is not fully optimized in terms of plating, emitter sheet resistance and surface passivation. Due to the scalable nature and simplicity of RIE-texturing as well as the LDSE process, we consider this specific combination a promising candidate for a cost-efficient process for future Si solar cells.
Original languageEnglish
JournalSolar Energy Materials & Solar Cells
Volume144
Pages (from-to)740-747
ISSN0927-0248
DOIs
StatePublished - 2016
CitationsWeb of Science® Times Cited: 2

Keywords

  • Black silicon, Reactive ion etching, Laser doping, LDSE, Plating
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