Binding energy and dephasing of biexcitons in In0.18Ga0.82As/GaAs single quantum wells

Publication: Research - peer-reviewJournal article – Annual report year: 1999

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Biexciton binding energies and biexciton dephasing in In0.18Ga0.82As/GaAs single quantum wells have been measured by time-integrated and spectrally resolved four-wave mixing. The biexciton binding energy increases from 1.5 to 2.6 meV for well widths increasing from 1 to 4 nm. The ratio between exciton and biexciton binding energy changes from 0.23 to 0.3 with increasing inhomogeneous broadening, corresponding to increasing well width. From the temperature dependence of the exciton and biexciton four-wave mixing signal decay, we have deduced the acoustic-phonon scattering of the exciton-biexciton transition. It is found to be comparable to that of the exciton transition, indicating that the deformation potential interactions for the exciton and the exciton-biexciton transitions are comparable. [S0163-1829(99)07931-X].
Original languageEnglish
JournalPhysical Review B Condensed Matter
Publication date1999
Volume60
Issue7
Pages4505-4508
ISSN0163-1829
DOIs
StatePublished

Bibliographical note

Copyright (1999) by the American Physical Society.

CitationsWeb of Science® Times Cited: 29

Keywords

  • PHOTOLUMINESCENCE, LOCALIZED BIEXCITONS, EXCITONS
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