Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates

Publication: Research - peer-reviewJournal article – Annual report year: 1998

View graph of relations

We have investigated the size distribution of germanium islands deposited onto a Si0.84Ge0.16 buffer layer, by atomic force microscopy. The size distribution was found to be bimodal at 630-740 degrees C and consisted of one group of smaller 'pyramidal' islands with a broad distribution of diameters and heights and another group of larger 'spherical' islands with a narrow distribution of diameters and heights. Both the size of the islands and the critical size for the change-over between the two growth modes are strongly temperature-dependent and decrease with decreasing temperature. To explain the origin of this bimodality, we have conducted experiments where the amount of material and the temperature were varied. We suggest that the bimodal size distribution and the temperature-dependent change-over between the two growth modes can be explained by an interplay between energetics and kinetics. (C) 1998 Elsevier Science S.A. All rights reserved.
Original languageEnglish
JournalThin Solid Films
Issue number1
Pages (from-to)92-97
StatePublished - 1998
Download as:
Download as PDF
Select render style:
Download as HTML
Select render style:
Download as Word
Select render style:

ID: 4660601