Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes. / Jiang, Chenhui; Krozer, Viktor; Johansen, Tom Keinicke; Bach, Heinz‐Gunter; Mekonnen, Giorgis G.; Yan, Lei.

In: Microwave and Optical Technology Letters, Vol. 53, No. 11, 2011, p. 2530-2533.

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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Jiang, Chenhui; Krozer, Viktor; Johansen, Tom Keinicke; Bach, Heinz‐Gunter; Mekonnen, Giorgis G.; Yan, Lei / Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes.

In: Microwave and Optical Technology Letters, Vol. 53, No. 11, 2011, p. 2530-2533.

Publication: Research - peer-reviewJournal article – Annual report year: 2011

Bibtex

@article{8586ffebcaf94058a8abd2489820b3cd,
title = "Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes",
keywords = "Transit-time effect, Electromagnetic models; p-i-n photodiodes, Small signal",
author = "Chenhui Jiang and Viktor Krozer and Johansen, {Tom Keinicke} and Heinz‐Gunter Bach and Mekonnen, {Giorgis G.} and Lei Yan",
year = "2011",
doi = "10.1002/mop.26327",
volume = "53",
number = "11",
pages = "2530--2533",
journal = "Microwave and Optical Technology Letters",
issn = "08952477",

}

RIS

TY - JOUR

T1 - Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes

A1 - Jiang,Chenhui

A1 - Krozer,Viktor

A1 - Johansen,Tom Keinicke

A1 - Bach,Heinz‐Gunter

A1 - Mekonnen,Giorgis G.

A1 - Yan,Lei

AU - Jiang,Chenhui

AU - Krozer,Viktor

AU - Johansen,Tom Keinicke

AU - Bach,Heinz‐Gunter

AU - Mekonnen,Giorgis G.

AU - Yan,Lei

PY - 2011

Y1 - 2011

N2 - This article presents a methodology for developing small‐signal behavioral electromagnetic (EM) models of p‐i‐n photodiodes (PDs) for high‐speed applications. The EM model includes RC bandwidth limitation effect and transit‐time effect. The model is capable of accurately modeling arbitrary complex parasitics of PD chips. It can be used to predict the optical‐to‐electrical (O/E) response of PDs with various p‐i‐n junction structures in the frequency domain at the behavioral level. Compared to equivalent circuit models, EM models avoid developing complicated circuit network to represent complex chip parasitics as well as extracting parasitic values and provide straightforward access to EM characteristics of devices. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2530–2533, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26327

AB - This article presents a methodology for developing small‐signal behavioral electromagnetic (EM) models of p‐i‐n photodiodes (PDs) for high‐speed applications. The EM model includes RC bandwidth limitation effect and transit‐time effect. The model is capable of accurately modeling arbitrary complex parasitics of PD chips. It can be used to predict the optical‐to‐electrical (O/E) response of PDs with various p‐i‐n junction structures in the frequency domain at the behavioral level. Compared to equivalent circuit models, EM models avoid developing complicated circuit network to represent complex chip parasitics as well as extracting parasitic values and provide straightforward access to EM characteristics of devices. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2530–2533, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26327

KW - Transit-time effect

KW - Electromagnetic models; p-i-n photodiodes

KW - Small signal

U2 - 10.1002/mop.26327

DO - 10.1002/mop.26327

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 08952477

IS - 11

VL - 53

SP - 2530

EP - 2533

ER -