An Implantable CMOS Amplifier for Nerve Signals

Publication: Research - peer-reviewConference article – Annual report year: 2003

View graph of relations

In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. The amplifier is constructed in a fully differential topology to maximize noise rejection. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time current-steering offset-compensation technique is utilized in order to minimize the noise contribution and to minimize dynamic impact on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 mum CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 10 kHz bandwidth, a CMRR of more than 87 dB and a PSRR greater than 84 dB. The equivalent input referred noise in the bandwidth of interest is 4.8 nV/rootHz. The amplifier power consumption is 275 muW, drawn from a power supply; V-DD = -V-SS = 1.5 V.
Original languageEnglish
JournalAnalog Integrated Circuits and Signal Processing
Publication date2003
Volume36
Issue1-2
Pages153-164
ISSN0925-1030
DOIs
StatePublished

Conference

Conference8th IEEE International Conference on Electronics, Circuits and Systems
Number8
CountrySpain
CityMalta
Period02/09/0105/09/01
SponsorIEEE CAS; MALTACOM; Air Malta; MITTS; Univ Malta
CitationsWeb of Science® Times Cited: 8

Keywords

  • Neural sensor, implantable microsystems, FES, ENG
Download as:
Download as PDF
Select render style:
APAAuthorCBEHarvardMLAStandardVancouverShortLong
PDF
Download as HTML
Select render style:
APAAuthorCBEHarvardMLAStandardVancouverShortLong
HTML
Download as Word
Select render style:
APAAuthorCBEHarvardMLAStandardVancouverShortLong
Word

ID: 3008334