Aberration-corrected electron microscopy of MnAs and As nanocrystals and voids in annealed (Ga,Mn)As

Publication: Research - peer-reviewConference article – Annual report year: 2011

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Aberration-corrected transmission electron microscopy is used to study voids and nano-crystalline MnAs and As phases formed during the annealing of Mn-doped GaAs. The effects of defocus and inner annular dark-field detector semi-angle on contrast of the nanocrystals are discussed.
Original languageEnglish
Book seriesJournal of Physics: Conference Series
Publication date2011
Volume326
Journal number1
Pages012018
ISSN1742-6588
DOIs
StatePublished

Conference

Conference17th International Conference on Microscopy of Semiconducting Materials
Number17
CountryUnited Kingdom
CityCambridge
Period04/04/1107/04/11
CitationsWeb of Science® Times Cited: 0
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