Aberration-corrected electron microscopy of MnAs and As nanocrystals and voids in annealed (Ga,Mn)As
Publication: Research - peer-review › Conference article – Annual report year: 2011
Aberration-corrected transmission electron microscopy is used to study voids and nano-crystalline MnAs and As phases formed during the annealing of Mn-doped GaAs. The effects of defocus and inner annular dark-field detector semi-angle on contrast of the nanocrystals are discussed.
|Book series||Journal of Physics: Conference Series|
|State||Published - 2011|
|Event||17th International Conference on Microscopy of Semiconducting Materials - Cambridge, United Kingdom|
|Conference||17th International Conference on Microscopy of Semiconducting Materials|
|???event.location???||University of Cambridge|
|Period||04/04/2011 → 07/04/2011|
|Citations||Web of Science® Times Cited: 1|
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