A toroidal inductor integrated in a standard CMOS process
Publication: Research - peer-review › Journal article – Annual report year: 2007
This paper presents a toroidal inductor integrated in a standard 0.13 um CMOS process. Finite-elements preliminary simulations are provided to prove the validity of the concept. In order to extract fundamental parameters by means of direct calculations, two different and well-known approaches are followed and the results are compared; this comparison provides useful guidelines for the design of the device. A very simple PI model for low frequencies is derived from 1-port and 2-port measurements, and a good matching with general theory is observed. The coil exhibits an inductance between 0.9 nH and 1.1 nH up to 20 GHz (physical limit for the measurement equipment) and a quality factor approaching 10 at 15 GHz. No self-resonance is observed within the measurement range.
| Original language | English |
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| Journal | Analog Integrated Circuits and Signal Processing |
| Publication date | 2007 |
| Volume | 50 |
| Journal number | 1 |
| Pages | 39-46 |
| ISSN | 0925-1030 |
| DOIs | |
| State | Published |
| Citations | Web of Science® Times Cited: 3 |
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Keywords
- RF, passive, coil, CMOS
ID: 3630779