Publication: Research - peer-review › Journal article – Annual report year: 2007
This paper presents a toroidal inductor integrated in a standard 0.13 um CMOS process. Finite-elements preliminary simulations are provided to prove the validity of the concept. In order to extract fundamental parameters by means of direct calculations, two different and well-known approaches are followed and the results are compared; this comparison provides useful guidelines for the design of the device. A very simple PI model for low frequencies is derived from 1-port and 2-port measurements, and a good matching with general theory is observed. The coil exhibits an inductance between 0.9 nH and 1.1 nH up to 20 GHz (physical limit for the measurement equipment) and a quality factor approaching 10 at 15 GHz. No self-resonance is observed within the measurement range.
|Citations||Error in DOI please contact firstname.lastname@example.org|
- RF, passive, coil, CMOS