A toroidal inductor integrated in a standard CMOS process

Publication: Research - peer-reviewJournal article – Annual report year: 2007

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This paper presents a toroidal inductor integrated in a standard 0.13 um CMOS process. Finite-elements preliminary simulations are provided to prove the validity of the concept. In order to extract fundamental parameters by means of direct calculations, two different and well-known approaches are followed and the results are compared; this comparison provides useful guidelines for the design of the device. A very simple PI model for low frequencies is derived from 1-port and 2-port measurements, and a good matching with general theory is observed. The coil exhibits an inductance between 0.9 nH and 1.1 nH up to 20 GHz (physical limit for the measurement equipment) and a quality factor approaching 10 at 15 GHz. No self-resonance is observed within the measurement range.
Original languageEnglish
JournalAnalog Integrated Circuits and Signal Processing
Publication date2007
Volume50
Issue1
Pages39-46
ISSN0925-1030
DOIs
StatePublished
CitationsWeb of Science® Times Cited: 3

Keywords

  • RF, passive, coil, CMOS
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