TY - GEN

T1 - A Small-Area Self-Biased Wideband CMOS Balun LNA with Noise Cancelling and Gain Enhancement

A1 - Bruun,Erik

A1 - Andreani,Pietro

A1 - Custódio,J. R.

A1 - Goes,J.

A1 - Oliveira,J. P.

A1 - Oliveira,L. B.

AU - Bruun,Erik

AU - Andreani,Pietro

AU - Custódio,J. R.

AU - Goes,J.

AU - Oliveira,J. P.

AU - Oliveira,L. B.

CY - Tampere, Finland

PY - 2010

Y1 - 2010

N2 - In this paper we present a low-power and small-area balun LNA. The proposed inverter-based topology uses selfbiasing and noise cancelling, yielding a very robust LNA with a low NF. Comparing this circuit with a conventional inverterbased circuit, we obtain a ∼3 dB enhancement in voltage gain, with improved robustness against PVT variations. Simulations results in a 130 nm CMOS technology show a 17.7dB voltage gain, nearly flat over a wide bandwidth (200MHz-1GHz), and an NF of approximately 4dB. The total power consumption is below 7.5 mW, with a very small die area of 0.007 mm2. All data are extracted from post-layout simulations.

AB - In this paper we present a low-power and small-area balun LNA. The proposed inverter-based topology uses selfbiasing and noise cancelling, yielding a very robust LNA with a low NF. Comparing this circuit with a conventional inverterbased circuit, we obtain a ∼3 dB enhancement in voltage gain, with improved robustness against PVT variations. Simulations results in a 130 nm CMOS technology show a 17.7dB voltage gain, nearly flat over a wide bandwidth (200MHz-1GHz), and an NF of approximately 4dB. The total power consumption is below 7.5 mW, with a very small die area of 0.007 mm2. All data are extracted from post-layout simulations.

KW - Inverter based amplifiers

KW - Area

KW - Noise canceling

KW - CMOS

KW - Wideband Balun LNA

KW - LNAs

KW - Self-Biased

BT - Proceedings 28. Norchip Conference

T2 - Proceedings 28. Norchip Conference

ER -