A Small-Area Self-Biased Wideband CMOS Balun LNA with Noise Cancelling and Gain Enhancement

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2010

  • Author: Bruun, Erik

    Electronics, Department of Electrical Engineering, Technical University of Denmark, Ørsteds Plads, 2800, Kgs. Lyngby, Denmark

  • Author: Andreani, Pietro

    Lund University, Department of Electrical and Information Technology

  • Author: Custódio, J. R.

    Universidade Nova de Lisboa, UNINOVA Campus da FCT/UNL

  • Author: Goes, J.

    Universidade Nova de Lisboa, UNINOVA Campus da FCT/UNL

  • Author: Oliveira, J. P.

    Universidade Nova de Lisboa, UNINOVA Campus da FCT/UNL

  • Author: Oliveira, L. B.

    Universidade Nova de Lisboa, UNINOVA Campus da FCT/UNL

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In this paper we present a low-power and small-area balun LNA. The proposed inverter-based topology uses selfbiasing and noise cancelling, yielding a very robust LNA with a low NF. Comparing this circuit with a conventional inverterbased circuit, we obtain a ∼3 dB enhancement in voltage gain, with improved robustness against PVT variations. Simulations results in a 130 nm CMOS technology show a 17.7dB voltage gain, nearly flat over a wide bandwidth (200MHz-1GHz), and an NF of approximately 4dB. The total power consumption is below 7.5 mW, with a very small die area of 0.007 mm2. All data are extracted from post-layout simulations.
Original languageEnglish
TitleProceedings 28. Norchip Conference
Place of publicationTampere, Finland
Publication date2010
StatePublished

Conference

Conference28th Norchip Conference
CountryFinland
CityTampere
Period15/11/1016/11/10

Keywords

  • Inverter based amplifiers, Area, Noise canceling, CMOS, Wideband Balun LNA, LNAs, Self-Biased
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