Publication: Research - peer-review › Article in proceedings – Annual report year: 2010
In this paper we present a low-power and small-area balun LNA. The proposed inverter-based topology uses selfbiasing and noise cancelling, yielding a very robust LNA with a low NF. Comparing this circuit with a conventional inverterbased circuit, we obtain a ∼3 dB enhancement in voltage gain, with improved robustness against PVT variations. Simulations results in a 130 nm CMOS technology show a 17.7dB voltage gain, nearly flat over a wide bandwidth (200MHz-1GHz), and an NF of approximately 4dB. The total power consumption is below 7.5 mW, with a very small die area of 0.007 mm2. All data are extracted from post-layout simulations.
|Title of host publication||Proceedings 28. Norchip Conference|
|Place of Publication||Tampere, Finland|
|State||Published - 2010|
|Conference||28th Norchip Conference|
|Period||15/11/2010 → 16/11/2010|
- Inverter based amplifiers, Area, Noise canceling, CMOS, Wideband Balun LNA, LNAs, Self-Biased
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