A method for manufacturing a hollow mems structure

Publication: ResearchPatent – Annual report year: 2017

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The present invention relates to a method for manufacturing an at least partly hollow MEMS structure. In a first step one or more through-going openings is/are provided in core material. The one or more through-going openings is/are then covered by an etch-stop layer. After this step, a bottom electrically conducting layer, one or more electrically conducting vias and a top electrically conducting layer are created. The bottom layer is connected to the vias and vias are connected to the top layer. The vias are formed by filling at least one of the one or more through-going openings. The method further comprises the step of creating bottom and top conductors in the respective bottom and top layers. Finally, excess core material is removed in order to create the at least partly hollow MEMS structure which may include a MEMS inductor.

Original languageEnglish
IPCH01F 17/ 00 A I
Patent numberWO2017108218
Date29/06/2017
CountryInternational Bureau of the World Intellectual Property Organization (WIPO)
StatePublished - 29 Jun 2017
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