A 4 Gb/s 2-level to 2 Gsymbol/s 4-level converter GaAs IC for semiconductor optical amplifier QPSK modulators
Publication: Research - peer-review › Journal article – Annual report year: 1994
The design of a 50 Ω impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier (SOA) modulators is presented. The designed IC exhibits eye diagrams with eye openings of better than 0.30 V and a spacing between adjacent output signal levels of 0.33 V for output symbol rates of up to 2 Gsymbol/s corresponding to input bit rates of up to 4 Gb/s. A novel differential super buffer output driver is applied, for which output reflection coefficients |S22| of less than -12 dB for frequencies up to 10 GHz are obtained. A 1 Gb/s optical QPSK microwave link transmission experiment using a packaged sample of the designed IC and a two-electrode semiconductor optical amplifier phase modulator has been conducted
| Original language | English |
|---|---|
| Journal | I E E E Journal of Solid State Circuits |
| Publication date | 1994 |
| Volume | 29 |
| Journal number | 10 |
| Pages | 1277-1281 |
| ISSN | 0018-9200 |
| DOIs | |
| State | Published |
Bibliographical note
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