Two techniques for lithographic patterning of silicon have been succesfully combined. An atomic-force microscope is used to oxidize hydrogen-passivated silicon on the nanometer scale. A focussed laser is used to perform the same oxidation on the micrometer and millimeter scale. The resulting combined oxide pattern acts as a mask in a subsequent etch procedure, which transfers the pattern into the underlying silicon. A nanowire connected by micrometer-wide wires to millimeter-sized contact pads has been made in this way in an amorphous silicon layer on an insulating oxide. A patent application for the laser oxidation technique has been made.
|Period||01/06/1995 → 01/06/1997|